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 1. Project Introduction

1.1 Description

RDA5870P integrates industry-lead Bluetooth and FM radio tuner into one chip and is optimized for mobile applications. Bluetooth and FM can work simultaneously and independently, with low power consumption levels target to battery powered devices. For the highest integration level, the required board space has been minimized and customer cost has been reduced. Manufacturers
can easily and fast integrate RDA5870P on their product to enable a rapid time to market.RDA5870P uses CMOS process with a compact 6*6mm 40-pin QFN package.

1.2 Bluetooth Features

  • CMOS single-chip fully-integrated radio and baseband

  • Compliant with Bluetooth 2.1 + EDR specification

  • Bluetooth Piconet and Scatternet support

  • ARM7-based microprocessor with on-chip ROM and RAM

  • Meet class 2 and class 3 transmitting power requirement, support class1 operation with external power amplifier

  • Provides +10dbm transmitting power

  • NZIF receiver with -90dBm sensitivity

  • Battery power supply directly with internal LDO

  • Support DCXO with internal oscillator circuit

  • Up-to 4Mbps high speed UART HCI support
  • Support AFH
  • Support 3-wire and 2-wire WIFI Co-existence handshake signals
  • Low power consumption
  • Minimum external component

1.3 FM Features 

  • CMOS single-chip fully-integrated FM tuner

  • Low power consumption

    Total current consumption lower than 20mA at
    3.0V power supply

  • Support worldwide frequency band

    50 -115 MHz

  • Digital low-IF tuner

    Image-reject down-converter

    High performance A/D converter

    IF selectivity performed internally

  • Fully integrated digital frequency synthesizer

    Fully integrated on-chip RF and IF VCO

    Fully integrated on-chip loop filter

  • Autonomous search tuning

  • Support 32.768KHz crystal oscillator

  • Digital auto gain control (AGC) Digital adaptive noise cancellation

    Mono/stereo switch

    Soft mute

    High cut

  • Programmable de-emphasis (50/75 μs)

  • Receive signal strength indicator (RSSI)

  • Bass boost

  • Volume control

  • Line-level analog output voltage

  • 32.768 KHz,26M (Reference clock)

  • I2C control bus interface

  • Directly support 32Ω resistance loading

  • Integrated LDO regulator

    1.8 to 5.5 V operation voltage

 

1.4 Applications

  • 1.8 to 5.5 V operation voltage

  • MP3,MP4 and PMP

  • PDA

  • Cordless phone

 

2. Chip Architectures And Functional Mudule

2.1 Bluetooth Chip Block Diagram

RDA5870E Bluetooth Block Diagram

RDA5870E Block

2.2 Chip Architectures

RDA5870E chip architech

RDA table

3. Chip Process And Features

3.1 Package

RDA5870E Package

RDA5870E package1 copy RDA6870E Package2 copy

                                                                                             正面图                                                                                                                     背面图

RDA table2

3.2 Pin size & Pin-Pin Pitch

RDA5870E Pin Size copy

3.3 X-Ray

RDA5870E Xray copy

3.3.1 Title  90°

RDA5870E Title90 copy

3.3.2 FIB Cross Section Image

FIN Cross Section Image

3.3.3 X-Section Line Define On Metal1

RDA5870E X Section

3.3.4 纵向结构分析

“ M1” Profile

M1 Profile copy

“ CNT ” Profile

CNT Profile copy

“ Poly ” Profile

POLY profile copy

3.4 Process And Parameters

process

分析总结表

RDAtable3

4. Memory Typle Analysis

4.1 Functional Module Area Ratio

memory

4.2 Memory Module Definition

memory2

4.3 Memory Cell Analysis

4.3.1 SRAM1 On M1

RDA5870E SRAM1

4.3.2 SRAM2 On M1

RDA5870E SRAM2

4.3.3 ROM On M1

RDA5870E ROM

 

存储容量表

bluetable